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| S DT 452AP S amHop Microelectronics C orp. Augus t , 2002 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -30V F E AT UR E S ( m W ) TYP ID -5.3A R DS (ON) S uper high dense cell design for low R DS (ON). 52 @ V G S = -10V 85 @ V G S = -4.5V R ugged and reliable. S OT-223 P ackage. D D D G S OT-223 S D G S OT-223 (J 23Z) S G S ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed a S ymbol VDS VGS @ TJ=125 C ID IDM IS PD TJ, TS TG Limit -30 20 -5.3 -16 5.3 3 0.08 -65 to 150 Unit V V A A A W W/ C C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Derate above 25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA 12 42 C /W C /W S DT 452AP E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS c Condition VGS = 0V, ID = -250uA VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250uA VGS = -10V, ID =-5.3A VGS = -4.5V, ID = -4.2A VDS = -5V, VGS = -10V VDS = -10V, ID = - 5.3A Min Typ C Max Unit -30 -1 100 OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage V uA nA V ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance -1 -1.5 52 85 -16 -7 860 470 180 VD = -15V, ID = -1A, VGEN = - 10V, R GE N = 6 ohm VDS =-15V,ID = -5.3A,VGS =-10V VDS =-15V,ID = -5.3A,VGS =-4.5V VDS =-15V, ID = -5.3A, VGS =-10V 2 -3 65 m ohm 100 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS Input Capacitance Output Capacitance R everse Transfer Capacitance CISS COSS CRSS c VDS =-15V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd 9 10 37 23 15 8.8 3 4 20 40 90 110 20 10.6 ns ns ns ns nC nC nC nC S DT 452AP E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =-5.3A Min Typ C Max Unit 5 -0.84 -1.3 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 10 -V G S =10,9,8,7,6V 8 16 -V G S =5V 6 4 2 20 -55 C 25 C T j=125 C -ID, Drain C urrent (A) -ID, Drain C urrent (A) 12 8 4 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1 1.5 2 2.5 3 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics R DS (ON), On-R es is tance(Ohms ) (Normalized) 3000 2500 1.8 1.6 1.4 1.2 1.0 0.8 F igure 2. Trans fer C haracteris tics V G S =-10V ID=-5.3A C , C apacitance (pF ) 2000 1500 1000 500 0 C is s C os s C rs s 0 5 10 15 20 25 30 0.6 -50 0 50 100 150 -V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S DT 452AP B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.09 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=-250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=-250uA 5 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 15 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 V G S =0V gFS , T rans conductance (S ) -Is , S ource-drain current (A) 20 12 9 6 3 V DS =-15V 0 0 5 10 15 10.0 1.0 0.4 0.6 0.7 0.9 1.1 1.3 -IDS , Drain-S ource C urrent (A) -V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 10 -ID, Drain C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 50 V G S , G ate to S ource V oltage (V ) 8 6 4 2 0 0 VDS =-15V ID=-5.3A 10 RD ON S( )L im it 10 1s DC 10 ms 0m s 1 0.1 0.03 VGS =-10V S ingle P ulse T A=25 C 0.1 1 10 30 50 2 4 6 8 10 12 14 16 Qg, T otal G ate C harge (nC ) -V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge 4 F igure 10. Maximum S afe O perating Area S DT 452AP -VDD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 5 10% S V IN 50% 10% 50% INVE R TE D P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 Duty C ycle=0.5 0.2 0.1 0.1 0.05 0.02 S ingle P uls e 0.01 10 -4 P DM t1 1. 2. 3. 4. 10 -2 t2 R cJ A (t)=r (t) * R cJ A R cJ A=S ee Datas heet T J M-T A = P DM* R cJ A (t) Duty C ycle, D=t1/t2 10 100 10 -3 10 -1 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 |
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